Document Details

Document Type : Thesis 
Document Title :
Studying Changes in Structural, Optical and Electrical Properties of Nickel Doped Copper Oxide (CuO) Nanoparticles
دراسة التغييرات في الخصائص التركيبية والضوئية والكهربائية للجسيمات النانوية من أكسيد النحاس (CuO) المطعم بالنيكل
 
Subject : Faculty of Sciences 
Document Language : Arabic 
Abstract : This work reports a study on structural, electrical and optical properties for both pure and Ni-doped CuO thin films with thickness around 60 nm. Films were deposited onto glass and quartz substrates by using the reactive sputtering evaporation technique at different doping concentrations (x = 0.0, 0.2, 0.3, 0.5, 0.7, 0.8). The films were annealed in air at different temperature. The study was carried out using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscopy (FE-SEM) for crystallographic structure, electrometer (Keithley 617) and (tow-point probe technique) for electrical transport mechanisms in the temperature range from 303K to 473K, and a double beam UV-VIS-NIR spectrophotometer for optical properties. The diffraction patterns showed that the as-prepared films of nickel-doped CuO were amorphous. Films annealed to 473 K showed both mixed polycrystalline and amorphous behavior. Annealing films at 673 K completely converted them to polycrystalline with monoclinic structure, except for the 80% Ni-doped thin film which was amorphous. The surface morphology of the films was found to be homogeneous, consists of the grains covered all substrate. This indicated that films were made up of nanoparticles grains. In addition, films displayed a very high resistivity and a negative differential resistance for some samples. The investigation of electrical activation energies showed no stable results, but we noticed that there are two activation energies and were varying from -5.52 to 0.98 eV and from -3.76 to 3.35 eV, respectively with increasing both annealing temperature and doping concentration. So, the electrical bandgap energies of those thin films change. All samples showed a high light absorbance that increased gradually with the increase in both nickel concentration and annealing temperature. By increasing the concentration of the Nickel, the direct bandgap energy increased from 3.97eV to 4.01eV at the room temperature, while it decreased from 3.92eV to 3.87eV for samples annealed at 473K. Moreover, the bandgap for samples annealing to 673K could almost be the same ~3.9eV. However, the indirect bandgap energy varied from 0.72eV to 1.35eV at the room temperature, it decreased from 1.9 to 1.2 eV for samples annealed to 473K and 673K. 
Supervisor : Prof. Fatima Salem Bahbari 
Thesis Type : Master Thesis 
Publishing Year : 1440 AH
2019 AD 
Co-Supervisor : Dr. Alaa Yahya Imam Mahmoud 
Added Date : Friday, February 8, 2019 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
وفاء عبدالله الغميطيAL-Ghameeti, Wafa AbdullahResearcherMaster 

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 43962.pdf pdf 

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